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2SK3228
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-765A(Z) Target specification 2nd. Edition December 1998 Features
* Low on-resistance R DS(on) =6m typ. * Low drive current * 4V gate drive device can be driven from 5V source
Outline
TO-220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange) 3. Source
2SK3228
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse)* I DR I AP *
3 3 2 1
Ratings 80 20 75 300 75 50 181 100 150 -55 to +150
Unit V V A A A A mJ W C C
EAR*
Pch* Tch Tstg
1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50
2
2SK3228
Electrical Characteristics (Ta = 25C)
Item Symbol Min 80 -- -- 1.0 -- -- |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 55 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 6.0 8.0 90 9700 1250 290 150 30 30 80 300 770 370 1.05 90 Max -- 0.1 10 2.5 7.5 12 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns I F = 75A, VGS = 0 I F = 75A, VGS = 0 diF/ dt =50A/s Test Conditions I D = 10mA, VGS = 0 VGS = 20V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1mA, VDS = 10V*1 I D = 40A, VGS = 10V*1 I D = 40A, VGS = 4V*1 I D = 40A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VDD = 25V VGS = 25V I D = 75A VGS = 10V, ID = 40A RL = 0.75 Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 1. Pulse test I GSS I DSS VGS(off) RDS(on)
3
2SK3228
Package Dimensions
Unit: mm
10.160.2 2.79 0.2 1.27 9.5 8.0
6.4 - 0.1
+ 0.2
+ 0.1
f 3.6 - 0.08
4.440.2 1.260.15
18.5 0.5
1.20.1
1.270.1 1.5 max 14.0 0.5 0.50.1
7.8 0.5
0.76 0.1
2.54 0.5
2.54 0.5
15.0 0.3
2.7 max
Hitachi Code TO-220AB SC-46 EIAJ -- JEDEC
4
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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